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參數(shù)資料
| 型號： | 2SB562B |
| 英文描述： | 4-Pin, Ultra Low-Voltage, Low-Power µP Reset Circuits with Manual Reset |
| 中文描述： | 晶體管|晶體管|進步黨| 20V的五（巴西）總裁| 1A條一（c）|至92VAR |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 29K |
| 代理商： | 2SB562B |
2SB566(K), 2SB566A(K)
3
60
40
20
0
50
100
150
C
Collector
power
dissipation
P
(W)
Case temperature TC (°C)
Maximum Collector Dissipation Curve
–10
–1
Collector
current
I
C
(A)
–5
–2
–1.0
–0.5
–0.2
–0.1
–2
–10
–5
–20
–50 –100
(–60 V, –0.15 A)
2SB566A K
IC max (Continuous) DC
Operation
TC = 25°C
(–50 V, –0.22 A)
2SB566 K
Area Safe Operation
Collector to emitter voltage VCE (V)
0
Collector
current
I
C
(A)
–5
–4
–3
–2
–1
TC = 25°C
–2
–4
–6
–8
–10
IB = 0
–10 mA
–20
–30
–40
–50
–60
–70
Typical Output Characteristics
Collector to emitter voltage VCE (V)
0
Collector
current
I
C
(A)
–5
VCE = –4 V
–2
–1.0
–0.2
–0.1
–0.05
–0.02
–0.01
–0.5
–0.4
–0.8
–1.2 –1.4
–1.0
–0.6
–0.2
T
C
=
75
°C
25
–25
Typical Transfer Characteristics
Base to emitter voltage VBE (V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB562C | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB564K | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB564L | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB564M | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB566(K)B | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB562BTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB562C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB562CTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB563 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB564 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR SP-8 -30V -1A 1W ECB 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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