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參數(shù)資料
| 型號(hào)： | 2SB561C |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92(1), 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | 2SB561C |
2SC2236
2006-11-09
3
Collector-emitter voltage VCE (V)
Colle
ct
or
curr
ent
I C
(A
)
Safe Operating Area
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(
m
A
)
hFE – IC
Collector current IC (mA)
VCE (sat) – IC
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
Base-emitter voltage VBE (V)
Colle
ct
or
curr
ent
I C
(
m
A
)
Ambient temperature Ta (°C)
Colle
ctor
p
ower
d
issip
atio
n
P
C
(
m
W
)
IC – VBE
PC – Ta
Collector current IC (mA)
DC
curre
nt
gain
h
FE
20
0
40
60
100
120
1000
200
0
400
600
80
140
160
800
10
1600
0
600
400
200
2
4
6
Common emitter
Ta = 25°C
8
6
IB = 1 mA
8
4
3
2
14
16
18
800
1200
1000
1400
10
12
0
300
Common emitter
VCE = 2 V
1
50
30
10
3
30
100
3000
100
10
1000
500
300
1000
Ta = 100°C
25
1600
0
600
400
200
0.2
0.4
0.6
Common emitter
VCE = 2 V
0.8
1.4
1.6
1.8
800
1200
1000
1400
1.0
1.2
Ta = 100°C
25
300
Common emitter
IC/IB = 50
5
1
3
0.05
0.03
0.01
3
30
100
3000
0.1
10
1000
0.5
0.3
1
Ta = 25°C
25
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.02
0.3
0.1
0.3
0.5
1
3
IC max (continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
1
VCEO max
5
3
0.05
10
30
1 s*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB561B | 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB562BTZ | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB562BTZ | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB564K-AZ | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB564 | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB561CTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB562 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SB562B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB562BTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB562C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
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