- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄41527 > 2SB549R 800 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB549R |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | 2SB549R |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
FEATURES
Ideal for audio amplifier drivers with 30 W to 50 W output
High voltage
Available for small mount spaces due to small and thin package
Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
2SB548/
2SD414
2SB549/
2SD415
Unit
Collector to base voltage
VCBO
100/120
V
Collector to emitter voltage
VCEO
80/80
100/100
V
Emitter to base voltage
VEBO
5.0/5.0
V
Collector current
IC(DC)
0.8/0.8
A
Collector current
IC(pulse)*
1.5/1.5
A
Total power dissipation
PT (Ta = 25
°C)
1.0
W
Total power dissipation
PT (Tc = 25
°C)
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
80/80 V, IE = 0
1.0/1.0
A
Emitter cutoff current
IEBO
VEB =
3.0/3.0 V, IC = 0
1.0/1.0
A
DC current gain
hFE1
VCE =
5.0/5.0 V, IC = 2.0/2.0 mA*
20
DC current gain
hFE2
VCE =
5.0/5.0 V, IC = 200/200 mA*
40
90
320
Collector saturation voltage
VCE(sat)
IC =
500/500 mA, IB = 50/50 mA*
0.4/0.3
2.0/2.0
V
Base saturation voltage
VBE(sat)
IC =
500/500 mA, IB = 50/50 mA*
0.9/0.9
1.5/1.5
V
Gain bandwidth product
fT
VCE =
5.0/5.0 V, IC = 100/100 mA
70/45
MHz
Collector capacitance
Cob
VCB =
10/10 V, IE = 0, f = 1.0 MHz
25/15
pF
*
Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE2 CLASSIFICATION
Marking
S
R
Q
P
hFE2
40 to 80
60 to 120
100 to 200
160 to 320
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD415S | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD415P-AZ | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD414 | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD414-AZ | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD415P-AZ | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB550 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB551 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
| 2SB552 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 15A I(C) | TO-3 |
| 2SB553 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SB554 | 制造商:Distributed By MCM 功能描述:-180V -15A 150W Bec Transistor TO-3 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。