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參數(shù)資料
| 型號： | 2SB1732 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Genera purpose amplification(−12V, −1.5A) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SB1732 |
2SB1732
Transistors
Genera purpose amplification(
12V,
1.5A)
Rev.A
1/2
2SB1732
z
Application
Low frequency amplifier
Driver
z
Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
≤
200mV
at I
C
=
500mA / I
B
=
25mA
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
z
External dimensions
(Unit : mm)
(1)Base
(2)Emitter
(3)Collector
0
0
0
0.15Max.
2
1
0
(3)
(
(
1.7
2.1
0.2
0.2
0
0
ROHM : TUMT3
Abbreviated symbol : EV
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
1.5
3
400
150
55 to
+
150
1
Unit
V
V
V
A
A
mW
°
C
°
C
2
1
2
z
Electrical characteristics
(Ta=25
°
C)
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, P
W
=
1ms
Each Terhinal Mounted on a Recommended Land
z
Packaging specifications
2SB1732
TL
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
15
12
6
270
Typ.
85
Max.
100
100
200
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
400
12
MHz
pF
V
CE
=
2V, I
E
=
200mA, f
=
100MHz
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
500mA, I
B
=
25mA
V
CE
=
2V, I
C
=
200mA
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
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