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參數(shù)資料
| 型號(hào)： | 2SB1631Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT-4-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 213K |
| 代理商： | 2SB1631Q |
2SJ350
Rev.2.00 Sep 07, 2005 page 4 of 6
2.0
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.4
0.8
1.2
1.6
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –3 A
ID = –6 A
–3 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
50
20
5
10
1
2
0.5
–0.1
–0.2
–0.5
–1
–5
–2
–10
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5
–1
–2
–5
–10
1000
500
200
50
100
20
10
di / dt = 50 A /
s, V
GS = 0
Ta = 25°C, Pulse Test
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
5000
1000
2000
500
200
100
50
20
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–200
–160
–120
–80
–40
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
20
40
60
80
100
VDS
VGS
500
200
100
20
50
10
5
–0.1 –0.2
–0.5 –1
–5
–2
–10
–0.05
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –25 V
–50 V
–80 V
VDD = –25 V
–50 V
–80 V
–10 V
VGS = –4 V
–1 A, –2 A
–1 A
–2 A
VGS = –10 V, VDD = –30 V
PW = 2
s, duty ≤ 1 %
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