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參數(shù)資料
| 型號(hào)： | 2SB1628ZY |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 3A I(C) | TO-243 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 16V的五（巴西）總裁| 3A條一（c）|至243 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | 2SB1628ZY |
2002
Document No. D16148EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SB1628
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SB1628 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
FEATURES
High current capacitance
Low collector saturation voltage
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
16
V
Emitter to base voltage
V
EBO
6.0
V
Collector current (DC)
I
C(DC)
3.0
A
Collector current (pulse)
I
C(pulse)
PW
≤
10 ms
Duty cycle
≤
50 %
5.0
A
Base current (DC)
I
B(DC)
0.2
A
Base current (pulse)
I
B(pulse)
PW
≤
10 ms
Duty cycle
≤
50 %
0.4
A
Total power dissipation
P
T
16 cm
2
×
0.7 mm ceramic board used
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
Electrode connection
1: Emitter
2: Collector (fin)
3: Base
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