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參數(shù)資料
| 型號： | 2SB1571HY |
| 廠商： | NEC Corp. |
| 英文描述： | 3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 30V的五（巴西）總裁| 5A條一（c）|至243 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SB1571HY |
Data Sheet D15930EJ2V0DS
2
2SB1571
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
0
120
90
30
150
60
100
80
40
60
20
d
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
0.2
0.4
0.6
0.8
1.0
5
4
3
2
1
I
B
=
10 mA
20 mA
50mA
V
CE
- Collector to Emitter Voltage - V
I
C
DC CURRENT GAIN vs. COLLECTOR CURRENT
0.1
0.02
0.05
0.01
0.2
0.5
10
1
2
5
1000
100
200
500
10
20
50
I
C
- Collector Current - A
h
F
V
CE
= 1 V
T
A
= 125
C
75
C
25
C
0
C
25
C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
400
200
600
800
1000
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
V
BE
- Base to Emitter Voltage - mV
I
C
V
CE
=
1
V
T
A
2
C
2
C
0
C
7
C
–
2
C
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
.
1000
500
200
100
50
20
10
1
0.01
2
5
I
C
= 20 I
B
I
C
- Collector Current - A
V
C
0.1
0.02
0.05
0.2
0.5
10
1
2
5
T
A
= 125
C
75
C
25
C
0
C
25
C
FORWARD BIAS SAFE OPERATING AREA
5
2
V
CE
- Collector to Emitter Voltage - V
1
10
100
20
50
10
5
2
1
0.05
0.02
0.01
0.5
0.2
0.1
I
C
T
= 25
C
Single Pulse
PW=1ms
10ms
100ms
DC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1571-T1-AZ(FY) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SB1571-T1-AZ-FZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1572-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,60V,3.0A,P-MINI MOLD3 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SB1572-T1-AZ HY | 制造商:Renesas Electronics 功能描述:PNP |
| 2SB1572-T1-AZ-HZ | 制造商:Renesas Electronics Corporation 功能描述: |
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