參數(shù)資料
型號: 2SB1553
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type(For power amplification)
中文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: MT4, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 52K
代理商: 2SB1553
2
Power Transistors
2SB1553
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
=Ta
(2) Without heat sink
(P
C
=2.0W)
(1)
(2)
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C
=25C
–80mA
–60mA
–40mA
–20mA
–10mA
–5mA
–2mA
I
B
=–100mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–6
–5
–4
–3
–2
–1
V
CE
=–4V
25C
–25C
T
C
=125C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=40
T
C
=100C
–25C
25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
10
10000
1000
100
30
300
3000
V
CE
=–4V
T
C
=100C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
1000
100
10
3
30
300
V
=–12V
f=10MHz
T
C
=25C
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
1
1000
100
10
3
30
300
I
=0
f=1MHz
T
C
=25C
C
o
0
–8
–2
–6
–4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=40
(–I
B1
=I
)
V
CC
=–50V
T
C
=25C
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
0.1
Collector to emitter voltage V
CE
(V)
1
10
100
0.3
3
30
– 0.01
–10
–1
– 0.1
– 0.03
– 0.3
–3
Non
repetitive
pulse
T
C
=25C
1ms
I
CP
I
C
t=10ms
DC
C
C
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