參數(shù)資料
型號(hào): 2SB1398Q
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: 5000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MT-2-A1, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 235K
代理商: 2SB1398Q
Transistors
1
Publication date: January 2003
SJC00082BED
2SB1398
Silicon PNP epitaxial planar type
For low-frequency power amplification
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Large collector current I
C
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
25
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
8A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 1 mA, I
B
= 0
25
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
7V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
100
nA
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
100
nA
Forward current transfer ratio *
1, 2
hFE
VCE = 2 V, IC = 2 A
90
205
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 3 A, IB = 0.1 A
1V
Transition frequency
fT
VCB
= 6 V, I
E
= 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
85
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
hFE
90 to 135
120 to 205
6.9±0.1
2.5±0.1
0.45
1.05±0.05
2.5±0.5
123
2.5±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.5)
(1.0)
4.5
±
0.1
14.5
±
0.5
4.0
0.7
0.65 max.
(0.2)
Unit: mm
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料
PDF描述
2SB1399 10 A, 120 V, PNP, Si, POWER TRANSISTOR
2SB1400 6 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB1400 6 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB1401 0.3 A, 300 V, PNP, Si, POWER TRANSISTOR
2SB1403 6 A, 120 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1398QTA 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1398TA 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1399 制造商:Renesas Electronics Corporation 功能描述:
2SB1412TL/Q 制造商:ROHM Semiconductor 功能描述:5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1412TLP 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2