參數(shù)資料
型號： 2SB1382
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)
中文描述： 16 A, 120 V, PNP, Si, POWER TRANSISTOR
封裝： TO-3PF, FM100, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 25K
代理商： 2SB1382
43
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–10
–20
–26
–2
–1
Collector-Emitter Voltage V
CE
(V)
–6
–5
–4
–3
C
C
(
–40mA
–12mA
–6mA
–3mA
I
B
=–1.5mA
–20mA
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
–10
–50
–5
–3
–100
–200
–0.03
–0.05
–1
–0.5
–0.1
–10
–50
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
100
μ
s
10ms
1ms
Without Heatsink
Natural Cooling
0
–16
–8
–12
–4
0
–2.4
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
15CCsTm
2CCeep
–0.3
–0.5
–1
–16
–10
–5
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
500
10000
5000
1000
20000
Typ
–0.3
–0.5
–1
–16
–10
–5
500
10000
5000
1000
20000
h
FE
–I
C
Temperature
Characteristics
(Typical)
(V
CE
=–4V)
Collector Current I
C
(A)
D
F
25C
–30C
125C
0.05 0.1
5
10
0.5
1
16
50
0
100
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
0
–3
–2
–1
–1
–100
–10
Base Current I
B
(mA)
C
C
(
–4A
–8A
I
C
=–16A
0.2
0.5
3
1
1
10
100
1000
Time t(ms)
T
θ
j
(
80
60
40
20
3.5
00
50
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2082)
Application :
Chopper Regulator, DC Motor Driver and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1382
–120
–120
–6
–16(
Pulse
–26)
–1
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1382
–10
max
–10
max
–120
min
2000
min
–1.5
max
–2.5
max
50
typ
350
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–8A
I
C
=–8A, I
B
=–16mA
I
C
=–8A, I
B
=–16mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
Darlington
2S B1382
(Ta=25°C)
(Ta=25°C)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
5
–8
R
L
(
)
I
C
(A)
V
(V)
5
I
(mA)
16
t
on
(
μ
s)
0.8typ
t
stg
(
μ
s)
1.8typ
t
f
(
μ
s)
1.0typ
I
(mA)
–16
V
(V)
–10
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
External Dimensions
FM100(TO3PF)
Weight : Approx 6.5g
a. Type No.
b. Lot No.
B
C
E
(2k
) (80
)
Equivalent circuit
相關(guān)PDF資料
PDF描述
2SB1383 Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)
2SB1395 DC-DC Converter,Motor Driver Applications
2SB1396 DC-DC Converter,Motor Driver Applications
2SB1397 Compact Motor Driver Applications
2SD2100 Compact Motor Driver Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1383 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 120V 25A 3-Pin (3+Tab) TO-3P Bulk 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 120V 25A 3-Pin (3+Tab) TO-3P Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 120V 25A TO3P 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1386 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1386T100Q 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1386T100R 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1389 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
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