參數(shù)資料
型號(hào): 2SB1321A
廠商: PANASONIC CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: Silicon PNP epitaxial planer type
中文描述: 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: MT1, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 68K
代理商: 2SB1321A
Transistors
2SB1321A
Silicon PNP epitaxial planer type
1
For general amplification
Complementary to 2SD1992A
I
Features
Large collector power dissipation P
C
(600 mW)
Allowing supply with the radial taping
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
60
50
7
1
500
V
Collector to emitter voltage
V
Emitter to base voltage
V
EBO
I
CP
I
C
V
Peak collector current
A
Collector current
mA
Collector power dissipation
P
C
T
j
T
stg
600
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
10 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0
, f
=
1 MHz
0.1
1
μ
A
μ
A
I
CEO
V
CBO
V
CEO
Collector to base voltage
60
50
7
V
Collector to emitter voltage
V
Emitter to base voltage
Forward current transfer ratio
*1
V
EBO
h
FE1
*2
h
FE2
V
85
340
40
Collector to emitter saturation voltage
V
CE(sat)
f
T
C
ob
0.35
0.6
V
Transition frequency
200
MHz
Collector output capacitance
6
15
pF
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
6.9
±
0.1
1.05
±
0.05
2.5
±
0.1
3
±
0
1
±
0
(1.45)
0.8
0.7
4.0
0
0
0
1
0.65 max.
0.45
+
0.1
0.05
0
+
0
0
2.5
±
0.5
2.5
±
0.5
2
±
0
1
2
3
1.2
±
0.1
0.65
0.45
0.1
+
(HW Type)
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Note)*1: Pulse measurement
*2: Rank classification
Product of no-rank is not classified and have no indication for rank.
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