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參數(shù)資料
| 型號： | 2SB1275TLP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1.5 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CPT3, SC-63, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SB1275TLP |
2SB1275 / 2SB1236A
Transistors
Rev.A
2/3
Electrical characteristics curves
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.1 Ground emitter output characteristics
0
1.0
0.8
0.6
0.4
0.2
5
4
3
2
1
0
Ta
=25°C
IB
= 0mA
1mA
2mA
3mA
4mA
5mA
6mA
PC
=1W
10mA
7mA
8mA
9mA
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR
CURRENT
:
I
C
(A)
Fig.2 Ground emitter propagation characteristics
10
2
1
0.5
0.2
0.1
0.01
0.02
0.05
5
1.8
1.4 1.6
1.2
1.0
0.8
0.6
0.4
0.2
0
VCE
= 5V
Ta
=
100
°C
25
°C
25
°C
COLLECTOR CURRENT : IC
(A)
DC
CURRENT
GAIN
:
h
FE
Fig.3 DC current gain vs. collector current ( )
20
50
100
200
500
1000
10
5
2
1
10
2
1
0.2
0.1
0.01 0.02 0.05
0.5
5
Ta
=25
°C
VCE
= 10V
5V
COLLECTOR CURRENT : IC
(A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
Fig.5 Collector-emitter saturation voltage
vs. collector current
10
2
1
5
0.2
0.1
0.5
0.02
0.01
0.05
2
1
0.2
0.1
0.01 0.02 0.05
0.5
5
Ta
=25
°C
IC/IB
=50
20
10
COLLECTOR CURRENT : IC
(A)
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(V)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
Fig.6 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current
10
2
1
5
0.2
0.1
0.5
0.02
0.01
0.05
2
1
0.2
0.1
0.01 0.02 0.05
0.5
5
Ta
=100
°C
Ta
= 25
°C
25
°C
25
°C
25
°C
100
°C
IC/IB
=10
VCE(sat)
VBE(sat)
COLLECTOR CURRENT : IC
(A)
DC
CURRENT
GAIN
:
h
FE
Fig.4 DC current gain vs. collector current (
)
20
50
100
200
500
1000
10
5
2
1
10
2
1
0.2
0.1
0.01 0.02 0.05
0.5
5
VCE
= 10V
Ta
=100
°C
25
°C
25
°C
COLLECTOR TO BASE VOLTAGE : VCB
(V)
COLLECTOR
OUTPUT
CAPACITANCE:
C
ob
(pF)
Fig.8 Collector output capacitance vs.
collector-base voltage
20
50
100
200
500
1000
10
5
2
1
100
20
10
2
1
0.1 0.2
0.5
5
50
Ta
=25
°C
IE
=0A
f
=1MHz
Fig.9 Safe operating area (2SB1236A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(A)
10
2
1
0.2
0.1
0.02
0.01
0.001
0.002
0.005
0.05
0.5
5
0.2
0.1
0.5 1 2 5 10 20 50 100 200 500 1000
Ic Max. (Pulse)
DC
Pw=10ms
100ms
Ta=25
°C
Single
NONREPETITIVE
PULSE
EMITTER CURRENT : IE
(mA)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Fig.7 Resistance raito vs. emmiter current
20
50
100
200
500
1000
10
5
2
1
2
5
10
20
50
100
200
500 1000
Ta
=25
°C
VCE
= 5V
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