參數(shù)資料
型號： 2SB1260-R-TP
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號晶體管
英文描述： 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, PLASTIC, PACKAGE-3
文件頁數(shù)： 1/2頁
文件大?。?/td> 185K
代理商： 2SB1260-R-TP
2SB1260-P
PNP
Plastic-Encapsulate
Transistors
Features
Power dissipation: PCM = 0.5W(Tamb=25 )
Collector current: ICM = -1A
Collector-base voltage: V(BR)CBO = -80V
Operating and storage junction temperature range
TJ, Tstg: -55
to + 150
Electrical Characteristics @ 25
Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Unit
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-50
A, IE=0)
-80
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector cut-off Current
(VCB=-60V, IE=0)
---
-1.0
IEBO
Emitter cut-off Current
(VEB=-4V, IC=0)
---
-1.0
hFE
DC current gain
(VCE=-3V, IC=-0.1A)
82
---
390
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-0.5A, IB=-0.05A)
fT
Transition Frequency
(VCE=-5.0Vdc, IC=-0.05Adc,F=30MHZ)
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
ZL