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參數(shù)資料
| 型號(hào)： | 2SB1205STP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | 2SB1205STP |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
Strobe High-Current Switching Applications
Ordering number:EN2114B
2SB1205
92098HA (KT)/8219MO/4137KI/4116KI, TS No.2114–1/4
Package Dimensions
unit:mm
2045B
[2SB1205]
Applications
Strobe, voltage regulators, relay drivers, lamp
drivers.
Features
Adoption of FBET, MBIT processes.
Low saturation voltage.
Fast switching speed.
Large current capacity.
Small and slim package making it easy to make
2SB1205-applied sets smaller.
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1205]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1205RTP | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1205RTP-FA | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1205RTP | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1205TP-FA | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1205RTP-FA | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1205T-E | 功能描述:兩極晶體管 - BJT BIP PNP 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1205T-TL-E | 功能描述:兩極晶體管 - BJT BIP PNP 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1209 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1215S-E | 功能描述:兩極晶體管 - BJT BIP PNP 3A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1215S-H | 功能描述:兩極晶體管 - BJT BIP PNP 3A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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