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參數(shù)資料
| 型號： | 2SB1183 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Darlington connection for high DC current gain. |
| 中文描述： | 達(dá)林頓連接高直流電流增益。 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 59K |
| 代理商： | 2SB1183 |
2SB1183 / 2SB1239
Transistors
Power transistor (
40V,
2A)
2SB1183 / 2SB1239
!
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SD1759 / 2SD1861.
!
Equivalent circuit
R
BE
4k
C
B
E
C
B
E
: Collector
: Base
: Emitter
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CER
V
EBO
I
C
P
C
Tj
Tstg
Limits
40
40
5
2
3
1
10
1
2SB1183
2SB1239
150
55~
+
150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc
=
25
°
C)
W
°
C
°
C
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1
Single pulse Pw
10ms
2
Printed circuit board 1.7 mm thick, collector plating 100m
m
2
or larger.
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SB1183
CPT3
1k~200k
TL
2500
2SB1239
ATV
1k~
T146
2500
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2
0
1
0
9.5
2.5
0.8Min.
1.5
6
2
(
(
C0.5
0
0.9
(
0
2
0
1.5
5.5
5
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1
1
0
4
2.5
2SB1183
ROHM : CPT3
EIAJ : SC-63
2SB1239
ROHM : ATV
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CER
BV
EBO
I
CBO
I
EBO
V
CE(sat)
Min.
40
40
5
1000
1000
Typ.
Max.
1
1
1.5
20000
Unit
V
V
V
μ
A
μ
A
V
Conditions
h
FE
2SB1183
2SB1239
Cob
11
pF
I
C
=
50
μ
A
I
C
=
1mA, R
BE
=
10k
I
E
=
50
μ
A
V
CB
=
24V
V
EB
=
4V
I
C
/I
B
=
0.6A/
1.2mA
V
CE
/I
C
=
2V/
0.5A
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Output capacitance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1183F5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 40V V(BR)CEO | 2A I(C) | TO-252 |
| 2SB1183TL | 功能描述:達(dá)林頓晶體管 DVR PNP 40V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SB1184 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power Transistor (−60V, −3A) |
| 2SB1184_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power Transistor (−60V, −3A) |
| 2SB1184_10 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power Transistor (-60V, -3A) |
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