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參數(shù)資料
| 型號(hào)： | 2SB1169R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 4 PIN |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 241K |
| 代理商： | 2SB1169R |
2SC3930G
3
SJC00357AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Cre VCE
GP IE
NF
I
E
bie gie
bre gre
bfe gfe
boe goe
0.1
1
10
100
0
3.0
2.5
2.0
1.5
1.0
0.5
f
= 10.7 MHz
Ta
= 25°C
IC
= 3 mA
1 mA
Collector-emitter voltage V
CE (V)
Reverse
transfer
capacitance
C
re
(pF)
(Common
emitter)
0.1
1
10
100
0
24
20
16
12
8
4
VCE
= 10 V
f
= 100 MHz
Ta
= 25°C
Power
gain
G
P
(dB
)
Emitter current I
E (mA)
0.1
1
10
0
12
10
8
6
4
2
VCB
= 6 V
f
= 100 MHz
Rg
= 50
Ta
= 25°C
Noise
figure
NF
(dB
)
Emitter current I
E (mA)
040
32
824
16
0
24
20
16
12
8
4
Vie
= g
ie + jbie
VCE
= 10 V
f
= 10.7 MHz
I E
=
1
mA
2 mA
4 mA
7 mA
58
100
Input conductance g
ie (mS)
Input
susceptance
b
ie
(mS
)
0.5
0
0.1
0.4
0.2
0.3
0.6
0
0.1
0.2
0.3
0.4
0.5
yre
= g
re
+ jb
re
VCE
= 10 V
f
= 10.7 MHz
IE
= 1 mA
58
100
Reverse transfer conductance g
re (mS)
Reverse
transfer
susceptance
b
re
(mS
)
0
100
80
20
60
40
120
0
20
40
60
80
100
yfe
= g
fe
+ jb
fe
VCE
= 10 V
f
= 10.7 MHz
10.7
0.1 mA
1 mA
2 mA
IE
= 4 mA
100
58
Forward transfer conductance g
fe (mS)
Forward
transfer
susceptance
b
fe
(mS
)
0
0.5
0.4
0.1
0.3
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
yoe
= g
oe
+ jb
oe
VCE
= 10 V
f
= 10.7 MHz
IE
= 1 mA
58
100
Output conductance g
oe (mS)
Output
susceptance
b
oe
(mS
)
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| 2SB1170Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SB1170R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SB1171 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-221VAR |
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