參數(shù)資料
型號(hào): 2SB1169AQ
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 1 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, I-G1, 4 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大小: 241K
代理商: 2SB1169AQ
2SC3930G
2
SJC00357AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IB VBE
IC VBE
VCE(sat) IC
PC Ta
IC VCE
IC IB
hFE IC
fT IE
Zrb IE
0
160
40
120
80
0
200
160
120
80
40
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
018
612
0
12
10
8
6
4
2
Ta
= 25°C
IB
= 100 A
80
A
60
A
40
A
20
A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0
100
80
20
60
40
0
15.0
12.5
10.0
7.5
5.0
2.5
VCE
= 10 V
Ta
= 25°C
Base current I
B (A)
Collector
current
I
C
(mA
)
0
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 25°C
Base-emitter voltage V
BE (V)
Base
current
I
B
(
A
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
VCE
= 10 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
240
200
160
120
80
40
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
400
300
100
200
VCB
= 10 V
f
= 100 MHz
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
0.1
1
10
0
60
50
40
30
20
10
VCB
= 10 V
f
= 2 MHz
Ta
= 25°C
Reverse
transfer
impedance
Z
rb
(
)
Emitter current I
E (mA)
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