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參數(shù)資料
| 型號(hào)： | 2SB1151L-O-T60-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 223K |
| 代理商： | 2SB1151L-O-T60-R |
2SB1151
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R204-022.C
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
DC
IC
-5
A
Collector Current
Pulse(Note 2)
ICP
-8
A
Base Current
IB
-1
A
SOT-223
1
W
TO-126
1.5
W
Power Dissipation (Ta=25°C)
TO-252
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.PW
≤10ms, Duty Cycle≤50%
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Voltage
BVCBO
IC=-100uA, IE=0
-60
V
Collector-Emitter Voltage
BVCEO
IC=-1mA, IB=0
-60
V
Emitter-Base Voltage
BVEBO
IE=-100uA, Ic=0
-7
V
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
-10
A
Emitter Cut-off Current
IEBO
VEB=-7V, IC=0
-10
A
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-2A, IB=-0.2A
-0.14
-0.3
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-2A, IB=-0.2A
-0.9
-1.2
V
hFE 1
VCE=-1V, IC=-0.1A
60
hFE 2
VCE=-1V, IC=-2A
160
400
DC Current Gain
hFE 3
VCE=-2V, IC=-5A
50
Turn On Time
tON
0.15
1
S
Storage Time
tSTG
0.78
2.5
S
Switching Time
Fall Time
tF
0.18
1
S
Pulse test : PW
≤350 S, Duty Cycle≤2% Pulse
CLASSIFICATION OF hFE2
RANK
O
Y
RANGE
160 ~ 320
200 ~ 400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1156PQ | 20 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1156P | 20 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1156R | 20 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1168R | 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB1168S | 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1151L-T60-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
| 2SB1151L-X-AA3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
| 2SB1151L-X-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
| 2SB1151L-X-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
| 2SB1151M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-126 |
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