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參數(shù)資料
| 型號： | 2SB1142T |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.5 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126ML, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SB1142T |
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
2SB1142/2SD1682
PS No.2060–4/4
0
12
10
8
6
4
2
1.5
20
060
40
80
100
140
120
160
PC -- Ta
ITR09046
No heat sink
2SB1142 / 2SD1682
10m
s
1.0
5
7
2
3
10
5
7
2
3
5
7
2
3
0.1
10
1.0
25
37
100
25
37
57
DC
operation
Ta=25
°C
DC
operation
Tc=25
°C
ICP=5A
1ms
IC=2.5A
ITR09045
2SB1142 / 2SD1682
A S O
--0.01
--0.1
23
5
77
2
3
5
2
3
5
7 --1.0
0.01
0.1
2
77
35
2
7
32
3
55
1.0
VBE(sat) -- IC
--1.0
--10
5
7
3
5
7
3
2
1.0
10
7
5
3
7
5
3
2
2SD1667
ITR09043
VBE(sat) -- IC
ITR09044
Ta= --25°C
25°C
2SB1142
IC / IB=20
2SD1682
IC / IB=20
75°C
Ta= --25°C
25°C
75°C
100ms
Ta=25
°C
Single pulse
Base-to-Emitter
Saturation
Voltage,
V
BE
(sat)
–
V
Collector Current, IC –A
Base-to-Emitter
Saturation
Voltage,
V
BE
(sat)
–
V
Collector Current, IC –A
Collector-to-Emitter Voltage, VCE –V
Collector
Current,
I C
–A
Collector
Dissipation,
P
C
–W
Ambient Temperature, Ta – C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1682R | 2.5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SB1142-Q | 2.5 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB1143-U | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB1143-T | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SD1683-T | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1143 | 制造商:SANYO Semiconductor Co Ltd 功能描述:4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB1143R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126 |
| 2SB1143S | 功能描述:兩極晶體管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1143T | 功能描述:兩極晶體管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1143U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126 |
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