參數(shù)資料
型號: 2SB1059-C
元件分類: 小信號晶體管
英文描述: SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 2/4頁
文件大小: 16K
代理商: 2SB1059-C
2SB1059
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
V
Emitter to base voltage
V
EBO
–6
V
Collector current
I
C
–1
A
Collector power dissipation
P
C
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–70
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
——
–1
AV
CB = –55 V, IE = 0
Emitter cutoff current
I
EBO
–0.2
AV
EB = –6 V, IC = 0
DC current transfer ratio
h
FE*
1
100
320
V
CE = –2 V, IC = –0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
–0.6
V
I
C = –1 A, IB = –0.1 A
Gain bandwidth product
f
T
65
MHz
V
CE = –2 V, IC = –10 mA
Collector output capacitance
Cob
35
pF
V
CB = –10 V, IE = 0, f = 1 MHz
Note:
1. The 2SB1059 is grouped by h
FE as follows.
BC
100 to 200
160 to 320
See characteristic curves of 2SB740.
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