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參數(shù)資料
| 型號： | 2SB1050 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency amplification) |
| 中文描述： | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SB1050 |
2
Transistor
2SB1050
0
160
40
120
80
140
20
100
60
0
1.6
1.2
0.4
1.0
1.4
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
0
–6
–5
–4
–1
–3
–2
0
–6
–5
–4
–3
–2
–1
Ta=25C
–45mA
–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
I
B
=–50mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–12
–10
–8
–6
–4
–2
V
CE
=–2V
Ta=75C
–25C
25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
600
500
400
300
200
100
V
CE
=–2V
Ta=75C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=30
Ta=75C
25C
–25C
C
C
1
10
100
1000
3
30
300
0
240
200
160
120
80
40
V
=–6V
Ta=25C
Emitter current I
E
(mA)
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
0
300
250
200
150
100
50
I
=0
f=1MHz
Ta=25C
C
o
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
h
FE
— I
C
V
CE(sat)
— I
C
f
T
— I
E
C
ob
— V
CB
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1050P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SC-71 |
| 2SB1050Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SC-71 |
| 2SB1050-QR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1050R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SC-71 |
| 2SB1050-RS | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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