參數(shù)資料
型號(hào): 2SB1015A
元件分類: 功率晶體管
英文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: 2-10R1A, SC-67, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 111K
代理商: 2SB1015A
2SB1015A
2003-02-04
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -60 V, IE = 0
-100
mA
Emitter cut-off current
IEBO
VEB = -7 V, IC = 0
-100
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = -50 mA, IB = 0
-60
V
hFE (1)
(Note)
VCE = -5 V, IC = -0.5 A
60
200
DC current gain
hFE (2)
VCE = -5 V, IC = -3 A
20
Collector-emitter saturation voltage
VCE (sat)
IC = -3 A, IB = -0.3 A
-0.5
-1.7
V
Base-emitter voltage
VBE
VCE = -5 A, IC = -0.5 A
-0.7
-1.0
V
Transition frequency
fT
VCE = -5 V, IC = -0.5 A
9
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
150
pF
Turn-on time
ton
0.4
Storage time
tstg
1.7
Switching time
Fall time
tf
-IB1 = IB2 = 0.2 A, duty cycle <= 1%
0.5
ms
Note: hFE (1) classification O: 60~120, Y: 100~200
Marking
Explanation of Lot No.
I B1
20
ms
VCC = -30 V
Output
15
9
IB2
IB1
Input
I B2
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
hFE classification (O/Y)
Product No.
Lot No.
B1015A
相關(guān)PDF資料
PDF描述
2SB1018A-Y 7 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1018A-O 7 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1020A 7 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB1025-DJ SMALL SIGNAL TRANSISTOR
2SB1025DH SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1015AO 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
2SB1015AY 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
2SB1015A-Y(F) 制造商:Toshiba America Electronic Components 功能描述:
2SB1015-GR 制造商:Toshiba America Electronic Components 功能描述:
2SB1015-Y 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR