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參數(shù)資料
| 型號(hào)： | 2SB1002CJ |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SB1002CJ |
2SB1002
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
V
Emitter to base voltage
V
EBO
–6
V
Collector current
I
C
–1
A
Collector peak current
i
C(peak) *
1
–1.5
A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–70
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.1
AV
CB = –50 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.1
AV
EB = –4 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
320
V
CE = –2 V, IC = –0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.6
V
I
C = –1 A,
I
B = –0.1 A (Pulse test)
Base to emitter saturation
voltage
V
BE(sat)
—
–1.2
V
I
C = –1 A,
I
B = –0.1 A (Pulse test)
Gain bandwidth product
f
T
—
150
—
MHz
V
CE = –2 V,
I
C = –10 mA (Pulse test)
Collector output capacitance
Cob
—
35
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB1002 is grouped by h
FE as follows.
Mark
CH
CJ
h
FE
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1002CJTL-E | 制造商:Renesas Electronics 功能描述:Trans GP BJT PNP 50V 1A 4-Pin (3+Tab) UPAK T/R 制造商:Renesas Electronics 功能描述:Trans GP BJT PNP 50V 1A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,50V,1A,UPAK 制造商:Renesas 功能描述:Trans GP BJT PNP 50V 1A 4-Pin(3+Tab) UPAK T/R |
| 2SB1005 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220 -50V -4A 30W BCE |
| 2SB1007 | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
| 2SB1008 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANS. TO-126-40V -2A 10W ECB |
| 2SB1009 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-126 |
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