- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄49916 > 2SB0976R (PANASONIC CORP) 5000 mA, 18 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB0976R |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 18 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 234K |
| 代理商： | 2SB0976R |
Transistors
1
Publication date: March 2003
SJC00064BED
2SB0976 (2SB976)
Silicon PNP epitaxial planar type
For low-frequency output amplification
For DC-DC converter
For stroboscope
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Large collector current I
C
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Note) The part number in the parenthesis shows conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
125 to 205
180 to 625
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
27
V
Collector-emitter voltage (Base open)
VCEO
18
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
8A
Collector power dissipation
PC
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
18
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
7V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 0
100
nA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
1
A
Forward current transfer ratio *
1, 2
hFE
VCE = 2 V, IC = 2 A
125
625
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 3 A, I
B
= 0.1 A
0.4
1.0
V
Transition frequency
fT
VCB = 6 V, IE = 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
60
pF
(Common base, input open circuited)
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB986-U | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SD1348-U | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1348-S | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1348-T | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SB986-T | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1000 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-62-25V -1A 1W ECB SURFACE MOUNT |
| 2SB1000A | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366A |
| 2SB1001 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB1001BH | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BJT |
| 2SB1001BJ | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BJT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。