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參數(shù)資料
| 型號(hào)： | 2SB0819(2SB819) |
| 英文描述： | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 中文描述： | 小信號(hào)裝置-小信號(hào)晶體管-一般使用低頻Amplifires |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | 2SB0819(2SB819) |
2SB0873
2
SJC00061BED
VCE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
IC VBE
Cob VCB
Safe operation area
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
Ta
= 25°C
35 mA
30 mA
25 mA
20 mA
15 mA
10 mA
5 mA
1 mA
IB
= 40 mA
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
0
2.0
1.6
0.4
1.2
0.8
0
12
10
8
6
4
2
VCE
= 2 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.01
0.1
1
10
100
IC / IB
= 30
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0
600
500
400
300
200
100
VCE
= 2 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
1
10
100
0
240
200
160
120
80
40
VCB
= 6 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
1
10
100
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
0
200
160
120
80
40
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
0.1
1
10
100
0.01
0.1
1
10
100
Single pulse
Ta
= 25°C
t
= 10 ms
t
= 1 s
ICP
IC
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
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