參數(shù)資料
型號: 2SA970
元件分類: 小信號晶體管
英文描述: 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: 2-5F1B, SC-43, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 153K
代理商: 2SA970
2SA970
2003-03-24
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA970
Low Noise Audio Amplifier Applications
Low noise: NF = 3dB (typ.) RG = 100 , VCE = 6 V, IC = 100 A,
f = 1 kHz
: NF = 0.5dB (typ.) RG = 1 k, VCE = 6 V, IC = 100 A,
f = 1 kHz
High DC current gain: hFE = 200~700
High breakdown voltage: VCEO = 120 V
Low pulse noise. Low 1/f noise
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-120
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Base current
IB
-20
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -120 V, IE = 0
-0.1
mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = -1 mA, IB = 0
-120
V
DC current gain
hFE
(Note)
VCE = -6 V, IC = -2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = -10 mA, IB = -1 mA
-0.3
V
Base-emitter voltage
VBE
VCE = -6 V, IC = -2 mA
0.65
V
Transition frequency
fT
VCE = -6 V, IC = -1 mA
100
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
4.0
pF
VCE = -6 V, IC = -0.1 mA, f = 10 Hz,
RG = 10 kW
6
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,
RG = 10 kW
2
Noise figure
NF
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,
RG = 100 W
3
dB
Note: hFE classification GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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