參數(shù)資料
型號: 2SA921
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
中文描述: 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92-B1, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 37K
代理商: 2SA921
1
Transistor
2SA921
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
I
Features
G
High collector to emitter voltage V
CEO
.
G
Low noise voltage NV.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–120
–120
–5
–50
–20
250
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –5V, I
C
= –2mA
I
C
= –20mA, I
B
= –2mA
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= –40V, I
C
= –1mA, G
V
= 80dB
R
g
= 100k
, Function FLAT
min
–120
–120
–5
180
typ
200
max
–100
–1
520
– 0.6
150
Unit
nA
μ
A
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank
R
S
h
FE
180 ~ 360
260 ~ 520
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