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參數資料
| 型號： | 2SA893A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 24K |
| 代理商： | 2SA893A |
2SA893, 2SA893A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SA893
2SA893A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–90
–120
V
Collector to emitter voltage
–90
–120
V
Emitter to base voltage
–5
–5
V
Collector current
–50
–50
mA
Collector power dissipation
300
300
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SA893
2SA893A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
–90
—
—
–120
—
—
V
I
C
= –1 mA, R
BE
=
∞
Collector cutoff current
I
CBO
—
—
–0.5
—
—
—
μ
A
μ
A
V
CB
= –75 V, I
E
= 0
V
CB
= –100 V, I
E
= 0
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
V
= –25 V, I
E
= 0,
f = 1 MHz
—
—
—
—
—
–0.5
DC current transfer ratio h
FE
*
1
250
—
800
250
—
800
Base to emitter voltage
V
BE
—
—
–0.75 —
—
–0.75 V
Collector to emitter
saturation voltage
V
CE(sat)
—
—
–0.5
—
—
–0.5
V
Gain bandwidth product f
T
—
120
—
—
120
—
MHz
Collector output
capacitance
Cob
—
1.8
—
—
1.8
—
pF
Noise figure
NF
—
2
10
—
2
10
dB
V
CE
= –6 V,
I
C
= –50
μ
A
R
g
= 50 k
, f = 1 kHz
Note:
D
1. The 2SA893/A is grouped by h
FE
as follows.
E
250 to 500
400 to 800
See characteristic curves of 2SA872 and 2SA872A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA893AD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SA893AD(TZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA893ADTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA893AE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SA893AETZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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