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參數(shù)資料
| 型號： | 2SA844D |
| 英文描述： | TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 中文描述： | 晶體管|晶體管|進步黨| 55V的五（巴西）總裁| 100mA的一（c）| SPAKVAR |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 22K |
| 代理商： | 2SA844D |
2SA844
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
–55
V
Collector to emitter voltage
–55
V
Emitter to base voltage
–5
V
Collector current
–100
mA
Emitter current
100
mA
Collector power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–55
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
–100
nA
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V, I
C
= –2 mA
I
C
= –10 mA, I
B
= –1 mA
Emitter cutoff current
—
—
–50
nA
DC current transfer ratio
160
—
800
Collector to emitter saturation
voltage
—
–0.1
–0.5
V
Base to emitter voltage
V
BE
f
T
Cob
—
–0.66
–0.75
V
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
E
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
—
200
—
MHz
Collector output capacitance
Note:
1. The 2SA844 is grouped by h
FE
as follows.
C
D
—
2.0
—
pF
E
160 to 320
250 to 500
400 to 800
See characteristic curves of 2SA836.
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相關(guān)代理商/技術(shù)參數(shù) |
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