參數(shù)資料
型號(hào): 2SA821STPPQ
元件分類: 小信號(hào)晶體管
英文描述: 30 mA, 210 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SPT, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大小: 67K
代理商: 2SA821STPPQ
2SD1834
Transistors
Rev.A
2/2
Electrical characteristics curves
0.1
0.2
0.5
1
2
5
10
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
COLLECTOR
CURRENT
:
Ic
(mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter propagation characteristics
Ta
=25
°C
VCE
=
5V
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
4
8
12
16
20
0
10
20
20A
40A
60A
80A
100A
120A
Fig.2 Ground emitter output characteristics (
Ι )
Ta
=25
°C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0.4
0.8
1.2
1.6
2.0
0
4
8
12
16
20
20A
40A
60A
80A
Fig.3 Ground emitter output characteristics (
ΙΙ )
Ta
=25
°C
200
A
180
A
160
A
140
A
120
A
100A
0.1 0.2 0.5 1 2
5 10 20
50 100
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (mA)
1
2
5
10
20
50
100
200
1000
500
Fig.4 DC current gain vs. collector current
Ta
=25
°C
VCE
= 3V
0.1 0.2 0.5 1 2
5 10 20
50 100
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
50
100
200
500
1000
Fig.5 Collector-emitter saturation voltage
vs. collector current
Ta
=25
°C
IC/IB
=10
0.1 0.2
0.5
1
2
5
10
20
50
100
TRANSITION
FREQUENCY
:
f
T
(MHz)
EMITTER CURRENT : IE (mA)
1
2
5
10
20
50
100
200
500
1000
Fig.6 Gain bandwidth product
vs. emitter current
Ta
=25
°C
VCE
= 5V
0.2
0.5
1
2
5
10 20
50
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
10
1
2
5
20
50
100
Fig.7 Emitter input capacitance
vs. emitter-base voltage
Collector output capacitance
vs. collector-base voltage
Ta
=25
°C
f
=1MHz
IE
=0A
IC
=0A
Cib
Cob
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