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參數(shù)資料
| 型號(hào)： | 2SA715 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(外延PNP晶體管) |
| 中文描述： | 硅外延進(jìn)步黨（外延進(jìn)步黨晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 28K |
| 代理商： | 2SA715 |
2SA715
2
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–35
—
—
V
I
C
= –1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–35
—
—
V
I
C
= –10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E
= –1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
h
FE
—
—
–20
μ
A
V
CB
= –35 V, I
E
= 0
V
CE
= –2 V, I
C
= –0.5 A
V
= –2 V, I
C
= –1.5 A
(Pulse test)
DC current transfer ratio
1
60
—
320
20
—
—
Base to emitter voltage
V
BE
—
–1.0
–1.5
V
V
= –2 V, I
C
= –1.5 A
(Pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.5
–1.0
V
I
= –2 A, I
B
= –0.2 A
(Pulse test)
Gain bandwidth product
f
T
—
160
—
MHz
V
= –2 V, I
C
= –0.2 A
(Pulse test)
Note:
1. The 2SA715 is grouped by h
FE
as follows.
B
C
D
60 to 120
100 to 200
160 to 320
0.8
0.6
0.4
0.2
0
50
100
150
200
Maximum Collector Dissipation
Curve
C
Ambient temperature Ta (
°
C)
Area of Safe Operation
–5
–2
–1.0
–0.5
–0.2
–0.1
–1
–2
–5
–10
(–35 V,–0.28 A)
(–4 V,–2.5 A)
–20
–50
Collector to emitter voltage V
CE
(V)
C
C
T
C
= 25
°
C
I
C
max(DC Operation)
P
C
=10W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA715B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 2.5A I(C) | TO-126 |
| 2SA715C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 2.5A I(C) | TO-126 |
| 2SA715D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 2.5A I(C) | TO-126 |
| 2SA715-D | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA719 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For low-frequency power amplification and driver amplification Complementary |
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