參數(shù)資料
型號(hào): 2SA673
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial(小信號(hào)晶體管)
中文描述: 硅外延進(jìn)步黨(小信號(hào)晶體管)
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 31K
代理商: 2SA673
2SA673, 2SA673A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SA673
2SA673A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–35
–50
V
Collector to emitter voltage
–35
–50
V
Emitter to base voltage
–4
–4
V
Collector current
–500
–500
mA
Collector power dissipation
400
400
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SA673
2SA673A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–35
–50
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–35
–50
V
I
C
= –1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
–4
–4
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
CE(sat)
–0.5
–0.5
μ
A
V
CB
= –20 V, I
E
= 0
I
C
= –150 mA,
I
B
= –15 mA*
2
V
CE
= –3 V,
I
C
= –10 mA
V
CE
= –3 V,
I
C
= –500 mA*
2
V
CE
= –3 V,
I
C
=–10 mA
Collector to emitter
saturation voltage
–0.2
–0.6
–0.2
–0.6
V
DC current trnsfer ratio
h
FE
*
1
60
320
60
320
DC current trnsfer ratio
h
FE
10
10
Base to emitter voltage
V
BE
–0.64 —
–0.64 —
V
Notes: 1. The 2SA673 and 2SA673A are grouped by h
FE
as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA673_11 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor
2SA673A 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon Plastic-Encapsulate Transistor
2SA673A(K) 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial
2SA673-AB 制造商:Renesas Electronics 功能描述:PNP Bulk