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參數(shù)資料
| 型號： | 2SA2186 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 中文描述： | 進步黨硅外延平面晶體管大電流開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SA2186 |
2SA2186
No. A0269-1/4
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of MBIT processes.
High current capacity.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
A
A
mA
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
--50
--50
--6
--2
--4
--400
0.9
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--100mA
VCE=--2V, IC=--1.5A
VCE=--10V, IC=--300mA
VCB=--10V, f=1MHz
IC=--1A, IB=--50mA
IC=--1A, IB=--50mA
--1
--1
μ
A
μ
A
DC Current Gain
200
40
560
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
420
16
--0.22
--0.9
MHz
pF
V
V
--0.43
--1.2
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0269
D2805EA MS IM TB-00001911
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2186
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
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| 2SA608 | GENERAL PURPOSE AMP, SWITCHING APPLICATIONS |
| 2SA608K | GENERAL PURPOSE AMP, SWITCHING APPLICATIONS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2186-AN | 功能描述:兩極晶體管 - BJT BIP PNP 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2188 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
| 2SA2192 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SA2192-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 10A TO-251 |
| 2SA2193 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
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