參數(shù)資料
型號: 2SA2098-2SC5887
廠商: Sanyo Electric Co.,Ltd.
英文描述: High-Current Switching Applications
中文描述: 大電流開關(guān)應用
文件頁數(shù): 1/5頁
文件大?。?/td> 37K
代理商: 2SA2098-2SC5887
2SA2098 / 2SC5887
No.7495-1/5
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7495
2SA2098 / 2SC5887
Package Dimensions
unit : mm
2041A
[2SA2098 / 2SC5887]
22004 TS IM TA-3725, 3726
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
1.6
1.2
0.75
1
1
10.0
1
5
3.2
7
3
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2
1
2
3
Specifications
( ) : 2SA2098
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Conditions
Ratings
Unit
V
V
V
A
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
(--50)60
(--)50
(--)6
(--)15
(--)20
(--)3
Collector Dissipation
PC
2
Tc=25
°
C
30
150
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
(--)10
(--)10
(400)560
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE
fT
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(--)1A
VCE=(--)10V, IC=(--)1A
μ
A
μ
A
180
(200)300
MHz
Continued on next page.
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