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參數(shù)資料
| 型號： | 2SA2084 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 70 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SA2084 |
Transistors
2SA2084
Silicon PNP epitaxial planar type
1
Publication date: January 2003
SJC00286AED
For general amplification
■
Features
High collector-emitter voltage (Base open) V
CEO
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
100
μ
A, I
B
=
0
I
E
=
1
μ
A, , I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
300
5
V
Emitter-base voltage (Collector open)
V
EBO
V
Forward current transfer ratio
*
h
FE
30
150
Collector-emitter saturation voltage
V
CE(sat)
C
ob
0.6
V
Collector output capacitance
(Common base, input open circuited)
7
pF
Transition frequency
f
T
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
50
MHz
Marking Symbol: 7N
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
300
300
5
70
100
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
mA
Peak collector current
I
CP
mA
Collector power dissipation
P
C
T
j
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
P
Q
h
FE
30 to 100
60 to 150
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