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參數(shù)資料
| 型號： | 2SA2062 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 140V / 10A, AF70W Output Applications |
| 中文描述： | 140伏特/ 10A條，AF70W輸出應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SA2062 |
2SA2062 / 2SC5774
No.6987-1/4
Features
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
Specifications
Note*( ) : 2SA2062
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
V
V
V
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
(-)160
(-)140
(-)6
(-)10
(-)20
2.5
110
150
Collector Dissipation
PC
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
-55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
(--)0.1
(--)0.1
160
Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
hFE(1)
hFE(2)
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)160V, IE=0
VEB=(--)4V, IC=0
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)5A
IC=(--)5A, IB=(--)0.5A
IC=(--)5mA, IE=0
IC=(--)50mA, RBE=
∞
IE=(--)5mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
mA
mA
DC Current Gain
60
35
Gain-Bandwidth Product
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
(10)15
(280)140
MHz
pF
V
V
V
V
V
μ
s
μ
s
μ
s
1.5
(--0.3)0.2
(--)2.0
(--)160
(--)140
(--)6
(0.45)0.56
(1.75)3.3
(0.25)0.4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6987A
D1503 TS IM TA-100929 / 62501 TS IM TA-3317, 3318
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2062 / 2SC5774
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
140V / 10A, AF70W
Output Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5774 | 140V / 10A, AF70W Output Applications |
| 2SA2071 | Power transistor (−60V, −3A) |
| 2SA2086S | Medium power transistor (-30V, -1A) |
| 2SA2087 | - |
| 2SA2088 | Medium power transistor (−60V, −0.5A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2063 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor |
| 2SA2064 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| 2SA2065 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
| 2SA2065(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 20V 1.5A hfe200-500 37ns |
| 2SA2065_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
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