參數(shù)資料
型號(hào): 2SA1907
廠商: SANKEN ELECTRIC CO LTD
元件分類(lèi): 功率晶體管
英文描述: Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
中文描述: 6 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: TO-3PF, FM100, 3 PIN
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 24K
代理商: 2SA1907
35
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC5099)
2S A1907
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1907
–80
–80
–6
–6
–3
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
10
–3
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SA1907
–10
max
–10
max
–80
min
50
min
–0.5
max
20
typ
150
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=–80V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–2A
I
C
=–12A, I
B
=–0.2A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
Safe Operating Area
(Single Pulse)
h
FE
–I
C
Temperature
Characteristics
(Typical)
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
0
0
–2
–1
–4
–3
–5
–6
–1
–2
–3
–4
Collector-Emitter Voltage V
CE
(V)
C
C
(
–200mA
–150mA
–100mA
–80mA
–50mA
–30mA
–20mA
I
B
=–10mA
0
–3
–2
–1
0
–0.5
Base Current I
B
(A)
–1.0
–1.5
C
C
(
I
C
=–6A
–4A
–2A
–0.02
–0.1
–0.5
–1
–5 –6
30
50
100
300
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
Typ
–5
–10
–50
–100
–0.1
–1
–0.5
–10
–20
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
100ms
1ms
0.02
0.1
0.05
0.5
1
5 6
0
20
10
30
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
f
T
–I
E
Characteristics
(Typical)
0
–6
–4
–2
0
–1.5
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
15CCsTm)
–(sTm
(V
CE
=–4V)
–0.02
–0.1
–0.5
–1
–5 –6
30
50
100
300
D
F
125C
25C
–30C
Collector Current I
C
(A)
θ
j-a
–t
Characteristics
0.3
1
5
0.5
1
10
100
1000
2000
Time t(ms)
T
θ
j
(
Pc–Ta Derating
60
40
20
3.5
00
50
25
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
R
L
(
)
I
C
(A)
V
(V)
5
I
B2
(A)
0.3
t
on
(
μ
s)
0.18typ
t
stg
(
μ
s)
1.10typ
t
f
(
μ
s)
0.21typ
I
(A)
–0.3
V
(V)
–10
External Dimensions
FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
h
FE
Rank O(50to100), P(70to140), Y(90to180)
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