參數(shù)資料
型號(hào): 2SA1836
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR
中文描述: 進(jìn)步黨硅外延晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 37K
代理商: 2SA1836
2001
PNP SILICON EPITAXIAL TRANSISTOR
2SA1836
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No.
Date Published
Printed in Japan
D15615EJ1V0DS00 (1st edition)
July 2001 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
FEATURES
High DC current gain: h
FE2
= 200 TYP.
High voltage: V
CEO
=
50 V
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
V
CBO
60
50
5.0
100
200
V
Collector to Emitter Voltage
V
CEO
V
Emitter to Base Voltage
V
EBO
V
Collector Current (DC)
Collector Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Note2
I
C(DC)
mA
I
C(pulse)
mA
P
T
200
mW
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
stg
–55 to + 150
°C
Notes 1.
PW
10 ms, Duty Cycle
50%
2.
When mounted on ceramic substrate of 3.0 cm
2
x 0.64 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
Emitter Cut-off Current
DC Current Gain
Note
I
EBO
V
EB
=
5.0 V, I
C
= 0
100
nA
h
FE1
V
CE
=
6.0 V, I
C
=
0.1 mA
50
h
FE2
V
CE
=
6.0 V, I
C
=
1.0 mA
90
200
600
Base to Emitter Voltage
Note
Collector Saturation Voltage
Note
Base Saturation Voltage
Note
V
BE
V
CE
=
6.0 V, I
C
=
1.0 mA
0.62
V
V
CE(sat)
I
C
=
100 mA, I
B
=
10 mA
0.18
0.3
V
V
BE(sat)
I
C
=
100 mA, I
B
=
10 mA
0.86
1.0
V
Gain Bandwidth Product
f
T
V
CE
=
6.0 V, I
E
= 10 mA
50
180
MHz
Output Capacitance
C
ob
V
CE
=
6.0 V, I
E
= 0, f = 1.0 MHz
4.5
6.0
pF
Note
Pulsed: PW
350
μ
s, Duty Cycle
2%
h
FE
CLASSFICATION
Marking
M4
M5
M6
M7
h
FE2
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
1
0
2
0.2
+0.1
–0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
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