參數(shù)資料
型號(hào): 2SA1803-O
元件分類: 功率晶體管
英文描述: 6 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-16F1A, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 134K
代理商: 2SA1803-O
2SA1803
2006-11-09
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1803
Power Amplifier Applications
Complementary to 2SC4688
Recommended for 40-W high-fidelity audio frequency amplifier
output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
DC
IC
6
Collector current
Pulse
ICP
12
A
Base current
IB
0.6
A
Collector power dissipation
(Tc = 25°C)
PC
55
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
相關(guān)PDF資料
PDF描述
2SA1803 6 A, 80 V, PNP, Si, POWER TRANSISTOR
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2SC4984 1.5 A, 15 V, NPN, Si, POWER TRANSISTOR
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