- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49899 > 2SA1734 1200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SA1734 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PW-MINI, 2-5K1A, SC-62, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 172K |
| 代理商： | 2SA1734 |
2SA1734
2010-08-27
1
TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process)
2SA1734
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA)
High speed switching time: tstg = 0.2 μs (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SC4539
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
1.2
A
Base current
IB
0.3
A
PC
500
Collector power dissipation
PC (Note 1)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1735TE12L | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1736 | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1742-AZ | 7 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SA1742 | 7 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SA1742-K | 7 A, 60 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1734(TE12L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1738 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA17380RL | 功能描述:TRANS PNP 15VCEO 50MA MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA17390RL | 功能描述:TRANS PNP 15VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA1740D-TD-E | 制造商:SANYO 功能描述:omo 400V 0.2A 60 to 120 PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS PNP HIGHV 400V 0.2A SOT89 制造商:Sanyo 功能描述:0 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。