參數(shù)資料
型號(hào)： 2SA1694
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon PNP Epitaxial Planar Transistor(硅PNP外延平面晶體管)
中文描述： 8 A, 120 V, PNP, Si, POWER TRANSISTOR
封裝： MT-100, TO-3P, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 24K
代理商： 2SA1694
28
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC4467)
2S A1694
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1694
–120
–120
–6
–8
–3
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
10
–4
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SA1694
–10
max
–10
max
–120
min
50
min
–1.5
max
20
typ
300
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–3A
I
C
=–3A, I
B
=–0.3A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
R
L
(
)
I
C
(A)
V
(V)
5
I
B2
(A)
0.4
t
on
(
μ
s)
0.14typ
t
stg
(
μ
s)
1.40typ
t
f
(
μ
s)
0.21typ
I
(A)
–0.4
V
(V)
–10
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
Safe Operating Area
(Single Pulse)
h
FE
–I
C
Temperature
Characteristics
(Typical)
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–8
–1
–2
–3
–4
Collector-Emitter Voltage V
CE
(V)
C
C
(
–350mA
–200mA
–150mA
–25mA
–100mA
–75mA
–50mA
I
B
=–10mA
0
–3
–2
–1
0
–0.1
–0.2
–0.3
Base Current I
B
(A)
–0.4
–0.5
–0.6
–0.7
–0.8
–0.9
–1.0
C
C
(
I
C
=–8A
–4A
–2A
–0.02
–0.1
–0.5
–1
–8
–5
30
50
100
200
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
Typ
–10
–50
–5
–100
–200
–0.1
–1
–0.5
–10
–20
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
100ms
10ms
0.02
0.1
0.05
0.5
1
5
8
0
20
10
30
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
0.3
1
3
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
θ
j-a
–t
Characteristics
f
T
–I
E
Characteristics
(Typical)
80
60
40
20
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
–8
–6
–2
–4
0
–1.5
–1.0
–0.5
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
1(a ep
2CCeep
–Cee)
(V
CE
=–4V)
–0.02
–0.1
–0.5
–1
–5
–8
30
50
100
300
D
F
125C
25C
–30C
Collector Current I
C
(A)
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
h
FE
Rank O(50to100), P(70to140), Y(90to180)
相關(guān)PDF資料
PDF描述
2SA1695 Silicon PNP Epitaxial Planar Transistor(硅PNP外延平面晶體管)
2SA1700 PNP Epitaxial Planar Silicon Transistors for High-Voltage Driver Applications(用于高電壓驅(qū)動(dòng)器應(yīng)用的PNP硅平面外延晶體管)
2SA1701 PNP Epitaxial Planar Silicon Transistors for Low-Frequency General-Purpose Amplifier Applications(用于低頻通用放大器應(yīng)用的PNP硅外延平面型晶體管)
2SA1702 PNP Epitaxial Planar Silicon Transistors for High-Current Switching Applications(用于大電流轉(zhuǎn)換應(yīng)用的PNP硅外延平面型晶體管)
2SA1703 PNP Epitaxial Planar Silicon Transistors for Low-Frequency Amplifier,Electronic Governor Applications(用于低頻放大器，電子控制器應(yīng)用的PNP硅外延平面型晶體管)
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