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參數(shù)資料
| 型號(hào)： | 2SA1650 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 148K |
| 代理商： | 2SA1650 |
Data Sheet D16122EJ1V0DS
2
2SA1650
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
100 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB =
5 V, IC = 0
10
A
DC current gain
hFE1*
VCE =
2 V, IC = 0.5 A
100
DC current gain
hFE2*
VCE =
2 V, IC = 1 A
100
400
DC current gain
hFE3*
VCE =
2 V, IC = 3 A
60
Collector saturation voltage
VCE(sat)1*
IC =
3 A, IB = 0.15 A
0.3
V
Collector saturation voltage
VCE(sat)2*
IC =
4 A, IB = 0.2 A
0.5
V
Base saturation voltage
VBE(sat)1*
IC =
3 A, IB = 0.15 A
1.2
V
Base saturation voltage
VBE(sat)2*
IC =
4 A, IB = 0.2 A
1.5
V
Gain bandwidth product
fT
VCE =
10 V, IC = 0.5 A
150
MHz
Collector capacitance
Cob
VCB =
10 V, IE = 0, f = 1 MHz
130
pF
Turn-on time
ton
0.3
s
Storage time
tstg
1.5
s
Fall time
tf
IC =
3 A, IB1 = IB2 = 0.15 A,
RL = 10
, VCC = 50 V
Refer to the test circuit.
0.4
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
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PDF描述 |
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| 2SA1650-M-AZ | 5 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SA1667 | 2 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 2SC5333 | 2 A, 300 V, NPN, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1650-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1650-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1652-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1652-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1656 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR SPA-50V -.1A .3W ECB |
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