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參數(shù)資料
| 型號(hào)： | 2SA1649-ZK |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 10000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 封裝： | MP-3Z, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 270K |
| 代理商： | 2SA1649-ZK |
Data Sheet D15588EJ3V0DS
2
2SA1649,1649-Z
ELECTRICAL CHARACTERISTICS (Ta = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
4.0 A, IB = 0.4 A, L = 1 mH
30
V
Collector to emitter voltage
VCEX(SUS)
IC =
4.0 A, IB2 = IB1 = 0.4 A,
VBE(OFF) = 1.5 V, L = 180
μH, clamped
40
V
Collector cutoff current
ICBO
VCE =
30 V, IE = 0
10
μA
Collector cutoff current
ICER
VCE =
30 V, RBE = 50 Ω, Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE =
30 V, VBE(OFF) = 1.5 V
10
μA
Collector cutoff current
ICEX2
VCE =
30 V, VBE(OFF) = 1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0
10
μA
DC current gain
hFE1
Note
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE2
Note
VCE =
2.0 V, IC = 2.0 A
100
200
400
DC current gain
hFE3
Note
VCE =
2.0 V, IC = 4.0 A
60
Collector saturation voltage
VCE(sat)1
Note
IC =
3.0 A, IB = 0.2 A
0.3
V
Collector saturation voltage
VCE(sat)2
Note
IC =
4.0 A, IB = 0.3 A
0.5
V
Base saturation voltage
VBE(sat)1
Note
IC =
3.0 A, IB = 0.2 A
1.2
V
Base saturation voltage
VBE(sat)2
Note
IC =
4.0 A, IB = 0.3 A
1.5
V
Collector capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
250
pF
Gain bandwidth product
fT
VCE =
10 V, IC = 0.5 A
120
MHz
Turn-on time
ton
0.3
μs
Storage time
tstg
1.5
μs
Fall time
tf
IC =
4.0 A, RL = 5 Ω,
IB1 =
IB2 = 0.15 A, VCC 20 V
Refer to the test circuit.
0.3
μs
Note Pulse test PW
≤ 350
μs, duty cycle ≤ 2%/pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
VIN
PW
50
Duty Cycle
≤ 2%
VBB
5 V
VCC
10%
90%
RL = 17
Ω
IB1
IC
IB2
IB1
IC
ton
tstg tf
TUT
IB2
s
μ
Base current
waveform
Collector current
waveform
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