參數(shù)資料
型號(hào)： 2SA1493
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon PNP Epitaxial Planar Transistor(硅PNP外延平面晶體管)
中文描述： 15 A, 200 V, PNP, Si, POWER TRANSISTOR
封裝： MT-200, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 24K
代理商： 2SA1493
21
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3857)
2S A1493
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1493
–200
–200
–6
–15
–5
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
12
–5
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SA1493
–100
max
–100
max
–200
min
50
min
– 3.0
max
20
typ
400
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=–200V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–5A
I
C
=–10A, I
B
=–1A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
Safe Operating Area
(Single Pulse)
h
FE
–I
C
Temperature
Characteristics
(Typical)
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–1
–2
–3
–4
Collector-Emitter Voltage V
CE
(V)
C
C
(
–.A
I
B
=–50mA
–100mA
–600mA
–1A
–400mA
–200mA
0
–3
–2
–1
0
–1
Base Current I
B
(A)
–2
–4
–3
C
C
(
I
C
=–15A
–10A
–5A
–0.02
–0.1
–1
–10
–0.5
–5
–15
10
100
50
300
Collector Current I
C
(A)
D
F
Typ
–2
–10
–100
–300
–0.1
–1
–0.5
–10
–50
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
3ms
Without Heatsink
Natural Cooling
DC
100ms
20ms
10ms
0.02
0.1
1
10
0
10
20
30
C
T
(
Z
)
(V
CE
=–12V)
(V
CE
=–4V)
Emitter Current I
E
(A)
Typ
1
10
100
1000
2000
Time t(ms)
0.1
1
2
0.5
T
θ
j
(
θ
j-a
–t
Characteristics
f
T
–I
E
Characteristics
(Typical)
160
120
80
40
5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
–15
–10
–5
0
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
1(aTm
2 sm
–Csm
(V
CE
=–4V)
–0.02
–0.1
–0.5
–1
–5
–10 –15
20
50
100
200
Collector Current I
C
(A)
D
F
125C
25C
–30C
R
L
(
)
I
C
(A)
V
(V)
5
I
(mA)
500
t
on
(
μ
s)
0.3typ
t
stg
(
μ
s)
0.9typ
t
f
(
μ
s)
0.2typ
I
(mA)
–500
V
(V)
–10
External Dimensions
MT-200
2
3
1.05
+0.2
-0.1
B
E
5.45
±0.1
5.45
±0.1
2-3.2
±0.1
36.4
±0.3
9
24.4
±0.2
7
2
±
2
4
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.
h
FE
Rank O(50to100), P(70to140), Y(90to180)
相關(guān)PDF資料
PDF描述
2SA1494 Silicon PNP Epitaxial Planar Transistor(硅PNP外延平面晶體管)
2SA1494 POWER TRANSISTORS(17A,200V,200W)
2SA1526 Switching Applications(with Bias Resistance)
2SC3920 Switching Applications(with Bias Resistance)
2SA1527 Switching Applications(with Bias Resistance)
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