參數(shù)資料
型號(hào)： 2SA1485
廠商： Hitachi,Ltd.
英文描述： Silicon PNP Epitaxial
中文描述： 硅外延進(jìn)步黨
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 28K
代理商： 2SA1485
2SA1485
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–200
V
Collector to emitter voltage
–200
V
Emitter to base voltage
–5
V
Collector current
–100
mA
Collector power dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–200
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–200
—
—
V
I
C
= –0.5 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CEO
h
FE
V
CE(sat)
—
—
–500
μ
A
V
CE
= –200 V, R
BE
=
∞
V
CE
= –12 V, I
C
= –2 mA*
1
I
C
= –30 mA, I
B
= –3 mA*
1
DC current transfer ratio
100
—
250
Collector to emitter saturation
voltage
—
—
–0.5
V
Base to emitter voltage
Note:
1. Pulse test
V
BE
—
—
–1.0
V
V
CE
= –12 V, I
C
= –2 mA*
1
相關(guān)PDF資料
PDF描述
2SA1486K 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2SA1486L TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-126
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