參數(shù)資料
型號: 2SA1484E
元件分類: 小信號晶體管
英文描述: SMALL SIGNAL TRANSISTOR
封裝: MPAK-3
文件頁數(shù): 2/7頁
文件大小: 34K
代理商: 2SA1484E
2SA1484
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–90
V
Collector to emitter voltage
V
CEO
–90
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–90
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–90
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–0.1
AV
CB = –70 V, IE = 0
Emitter cutoff current
I
EBO
–0.1
AV
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
250
800
V
CE = –12 V, IC = –2 mA*
2
Collector to emitter saturation
voltage
V
CE(sat)
–0.15
V
I
C = –10 mA, IB = –1 mA*
2
Base to emitter saturation
voltage
V
BE(sat)
–1.0
V
I
C = –10 mA, IB = –1 mA*
2
Notes: 1. The 2SA1484 is grouped by h
FE as follows.
2. Pulse test
Grade
D
E
Mark
IRD
IRE
h
FE
250 to 500
400 to 800
相關(guān)PDF資料
PDF描述
2SA1485 SMALL SIGNAL TRANSISTOR, TO-92
2SA1494P 17 A, 200 V, PNP, Si, POWER TRANSISTOR
2SA1494Y 17 A, 200 V, PNP, Si, POWER TRANSISTOR
2SA1498O 0.6 A, 400 V, PNP, Si, POWER TRANSISTOR
2SA1498P 0.6 A, 400 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1486-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 600V 1A 3-Pin TO-126 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP Power Transistor, 600V, 1A, TO-126 制造商:Renesas 功能描述:Trans GP BJT PNP 600V 1A 3-Pin TO-126
2SA1486AZ-K 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk
2SA1486-AZ-L 制造商:Renesas Electronics 功能描述:Bulk
2SA1486-K(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SA1486-L(AZ) 制造商:Renesas Electronics Corporation 功能描述: