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參數(shù)資料
| 型號： | 2SA1484 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SA1484 |
2SA1484
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–90
V
Collector to emitter voltage
–90
V
Emitter to base voltage
–5
V
Collector current
–100
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–90
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–90
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
–0.1
μ
A
μ
A
V
CB
= –70 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V, I
C
= –2 mA*
2
I
C
= –10 mA, I
B
= –1 mA*
2
Emitter cutoff current
—
—
–0.1
DC current transfer ratio
250
—
800
Collector to emitter saturation
voltage
—
—
–0.15
V
Base to emitter saturation
voltage
Notes: 1. The 2SA1484 is grouped by h
FE
as follows.
2. Pulse test
Grade
D
V
BE(sat)
—
—
–1.0
V
I
C
= –10 mA, I
B
= –1 mA*
2
E
Mark
IRD
IRE
h
FE
250 to 500
400 to 800
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