參數(shù)資料
型號: 2SA1468
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數(shù): 2/6頁
文件大?。?/td> 31K
代理商: 2SA1468
2SA1468
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–180
V
Collector to emitter voltage
–180
V
Emitter to base voltage
–5
V
Collector current
–100
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–180
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–180
V
I
C
= –0.5 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–5
V
I
E
= –10
μ
A, I
C
= 0
DC current transfer ratio
h
FE
*
1
V
CE(sat)
100
320
V
CE
= –12 V, I
C
= –2 mA*
2
I
C
= –30 mA, I
B
= –3 mA*
2
Collector to emitter saturation
voltage
–0.5
V
Base to emitter voltage
V
BE
f
T
Cob
–1.0
V
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
C
= –10 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
200
MHz
Collector output capacitance
Notes: 1. The 2SA1468 is grouped by h
FE
as follows.
2. Pulse test
Grade
B
3.5
pF
C
Mark
INB
INC
h
FE
100 to 200
160 to 320
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