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| 型號(hào)： | 2SA1434 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CP, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SA1434 |
O3103TN (KT)/71598HA (KT)/3277KI/N135KI, TS No.1853-1/3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amp Applications
Ordering number:ENN1853A
2SA1434
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings at Ta = 25C
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
Package Dimensions
unit:mm
2018B
[2SA1434]
Applications
Low frequency general-purpose amplifiers, drivers,
muting circuits.
Features
Ultrasmall-sized package permitting 2SA1434-used
sets to be made smaller, slimer.
Adoption of FBET process.
High DC current gain (hFE=500 to 1200).
Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
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