- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49896 > 2SA1430 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SA1430 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7D101A, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 126K |
| 代理商： | 2SA1430 |
2SA1430
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
VCES
20
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed
(Note 1)
ICP
4
A
Base current
IB
2
A
Collector power dissipation
PC
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
10
―
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
6
―
V
hFE (1)
(Note 2)
VCE = 1 V, IC = 0.5 A
140
―
600
DC current gain
hFE (2)
VCE = 1 V, IC = 4 A
60
120
―
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 50 mA
―
0.20
0.50
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 2 A
―
0.83
1.5
V
Transition frequency
fT
VCE = 1 V, IC = 0.5 A
―
140
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
50
―
pF
Note 2: hFE (1) classification A: 140 to 280, B: 200 to 400, C: 300 to 600
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1432 | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1432-O | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1451A-O | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SA1451A-Y | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SA1460-K | 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1430-B(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1430-C(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1431-Y | 制造商:Toshiba America Electronic Components 功能描述:5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1431-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1432-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 300V 0.1A 3-Pin MSTM |
發(fā)布緊急采購，3分鐘左右您將得到回復。